The STW78N65M5 and STW62N65M5 from STMicroelectronics are the industry’s first 650V AEC-Q101 automotive-qualified MOSFETs in the popular TO-247 package. The 650V rating provides greater safety margin when exposed to high-voltage spikes, enhancing the reliability of automotive power and control modules. The two devices’ extremely low on-resistance (RDS(ON)) of 0.032Ω and 0.049Ω respectively, combined with the compact TO-247 outline, enhances system energy efficiency and power density.

The new devices owe their industry-leading performance to ST’s MDmesh™ V super-junction technology, which produces high-voltage devices with very low RDS(ON) per die area allowing smaller package sizes. Gate charge (Qg) and input capacitance are also low, resulting in outstanding Qg x RDS(ON) figure of merit (FOM) with high switching performance and efficiency. In addition, superior avalanche robustness ensures increased ruggedness at sustained high-voltage operation.
MDmesh V combines an innovative proprietary vertical process technology with STMicroelectronics’ proven PowerMESH™ horizontal architecture, achieving around 50% lower on-resistance than comparable MDmesh™ II devices.

ST’s 650V automotive-qualified MOSFETs in the TO-247package are in volume production.